Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/drain source voltage (Vds): 620 V
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 550pF @50V(Vds)
Technical parameters/rated power (Max): 70 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 10.75 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF4N62K3
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics
|
||
STH180N10F3-2
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ F3，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
||
STU4N62K3
|
ST Microelectronics | 完全替代 | TO-251-3 |
STMICROELECTRONICS STU4N62K3 功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V
|
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