Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 26.0 A
Technical parameters/dissipated power: 450W (Tc)
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 26.0 A
Technical parameters/rise time: 52.0 ns
Technical parameters/Input capacitance (Ciss): 1770pF @25V(Vds)
Technical parameters/dissipated power (Max): 450W (Tc)
Encapsulation parameters/installation method: Screw
Encapsulation parameters/Encapsulation: ISOTOP
External dimensions/packaging: ISOTOP
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN26N90
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN26N90 功率场效应管, MOSFET, N沟道, 26 A, 900 V, 300 mohm, 10 V, 5 V
|
||
IXFN27N80Q
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN27N80Q 功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V
|
||
STW21N90K5
|
ST Microelectronics | 功能相似 | TO-247-3 |
N沟道900 V， 0.25 I© （典型值） ， 18.5齐纳保护SuperMESHâ ??在D2PAK ， TO- 220FP ， TO- 220和TO- 247封装¢ 5功率MOSFET N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH⢠5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
|
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