Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.32 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 520 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Continuous drain current (Ids): 27.0 A
Technical parameters/rise time: 28 ns
Technical parameters/isolation voltage: 2.50 kV
Technical parameters/Input capacitance (Ciss): 7600pF @25V(Vds)
Technical parameters/rated power (Max): 520 W
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 520W (Tc)
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/length: 38.2 mm
External dimensions/width: 25.07 mm
External dimensions/height: 9.6 mm
External dimensions/packaging: SOT-227-4
Physical parameters/weight: 40.0 g
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management, Motor Drive&Control, Motor Drive&Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN25N90
|
IXYS Semiconductor | 类似代替 | SOT-227-4 |
SOT-227B N-CH 900V 25A
|
||
IXFN26N90
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN26N90 功率场效应管, MOSFET, N沟道, 26 A, 900 V, 300 mohm, 10 V, 5 V
|
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