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Model IXFN25N90
Description SOT-227B N-CH 900V 25A
Product QR code
Brand: IXYS Semiconductor
Packaging SOT-227-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
229.75  yuan 229.75yuan
1+:
$ 264.2137
10+:
$ 257.3211
50+:
$ 252.0368
100+:
$ 250.1988
200+:
$ 248.8203
500+:
$ 246.9823
1000+:
$ 245.8336
2000+:
$ 244.6848
Quantity
1+
10+
50+
100+
200+
Price
$264.2137
$257.3211
$252.0368
$250.1988
$248.8203
Price $ 264.2137 $ 257.3211 $ 252.0368 $ 250.1988 $ 248.8203
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7319) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 600 W

Technical parameters/drain source voltage (Vds): 900 V

Technical parameters/Continuous drain current (Ids): 25A

Technical parameters/Input capacitance (Ciss): 10800pF @25V(Vds)

Technical parameters/rated power (Max): 600 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 600W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-227-4

External dimensions/packaging: SOT-227-4

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFN26N90 IXFN26N90 IXYS Semiconductor 类似代替 SOT-227-4
IXYS SEMICONDUCTOR IXFN26N90 功率场效应管, MOSFET, N沟道, 26 A, 900 V, 300 mohm, 10 V, 5 V
PDF
IXFN27N80Q IXFN27N80Q IXYS Semiconductor 类似代替 SOT-227-4
IXYS SEMICONDUCTOR IXFN27N80Q 功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V
PDF

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