Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 26.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 300 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 600 W
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 26.0 A
Technical parameters/rise time: 35 ns
Technical parameters/isolation voltage: 2.50 kV
Technical parameters/Input capacitance (Ciss): 10800pF @25V(Vds)
Technical parameters/rated power (Max): 600 W
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 600W (Tc)
Encapsulation parameters/installation method: Screw
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/packaging: SOT-227-4
Physical parameters/weight: 44.0 g
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN25N90
|
IXYS Semiconductor | 类似代替 | SOT-227-4 |
SOT-227B N-CH 900V 25A
|
||
IXFN27N80Q
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN27N80Q 功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V
|
||
IXFN39N90
|
IXYS Semiconductor | 类似代替 | SOT-227-4 |
N沟道 900V 39A
|
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