Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 8.5 mΩ
Technical parameters/dissipated power: 60 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)
Technical parameters/rated power (Max): 60 W
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 60W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD18N55M5
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
|
||
STD3NK60ZT4
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS STD3NK60ZT4 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
|
||
STD6N95K5
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
|
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