Technical parameters/number of channels: 1
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 110 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 205 ns
Technical parameters/Input capacitance (Ciss): 2060pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/width: 6.2 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD4806NT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
N 通道功率 MOSFET,30V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
||
STU150N3LLH6
|
ST Microelectronics | 功能相似 | TO-251-3 |
STMICROELECTRONICS STU150N3LLH6 晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0024 ohm, 10 V, 1 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review