Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0024 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 4040pF @25V(Vds)
Technical parameters/descent time: 46 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.6 mm
External dimensions/width: 2.4 mm
External dimensions/height: 6.9 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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IPB034N03LGATMA1
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STD100N3LF3
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ST Microelectronics | 功能相似 | TO-252-3 |
N沟道30 V ， 0.0045 Ω ， 80 A， DPAK平面的STripFET ？二功率MOSFET N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET? II Power MOSFET
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