Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 6.00 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.65 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 14.0 A, 76.0 A
Technical parameters/Input capacitance (Ciss): 2142pF @12V(Vds)
Technical parameters/rated power (Max): 1.4 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.4W (Ta), 68W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD4809NT4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
N 通道功率 MOSFET，30V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
||
NTD4906NT4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
54A,30V功率MOSFET
|
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