Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 55 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 160 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/Continuous drain current (Ids): 22.0 A
Technical parameters/rise time: 26 ns
Technical parameters/Input capacitance (Ciss): 2670pF @25V(Vds)
Technical parameters/rated power (Max): 160 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.4 mm
External dimensions/width: 9.35 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP50NF25
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™，STMicroelectronics
|
||
SUM45N25-58-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
N沟道250 -V （ D- S） 175℃ MOSFET N-Channel 250-V (D-S) 175 °C MOSFET
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