Technical parameters/number of channels: | 1 |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.055 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 160 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 250 V |
|
Technical parameters/Continuous drain current (Ids): | 22.0 A |
|
Technical parameters/rise time: | 26 ns |
|
Technical parameters/Input capacitance (Ciss): | 2670pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 160 W |
|
Technical parameters/descent time: | 20 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 160W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.4 mm |
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Dimensions/Width: | 4.6 mm |
|
Dimensions/Height: | 15.75 mm |
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Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR FQP27N25.. 场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220
|
||
FQP27N25
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP27N25.. 场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220
|
||
FQP27N25
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQP27N25.. 场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220
|
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