Technical parameters/dissipated power: | 3.75W (Ta), 375W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 250 V |
|
Technical parameters/Input capacitance (Ciss): | 5000pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 3.75W (Ta), 375W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM18N25-165-E3
|
VISHAY | 类似代替 | TO-263-3 |
MOSFET N-CH 250V 18A D2PAK
|
||
SUM18N25-165-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 250V 18A D2PAK
|
||
SUM18N25-165-E3
|
Vishay Semiconductor | 类似代替 | TO-263 |
MOSFET N-CH 250V 18A D2PAK
|
||
SUM45N25-58
|
Visay | 功能相似 |
Power Field-Effect Transistor, 45A I(D), 250V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
|
|||
SUM45N25-58
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 45A I(D), 250V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
|
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