Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.75 W
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 18.0 A
Technical parameters/rise time: 130 ns
Technical parameters/Input capacitance (Ciss): 1950pF @25V(Vds)
Technical parameters/rated power (Max): 3.75 W
Technical parameters/descent time: 100 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.41 mm
External dimensions/width: 9.652 mm
External dimensions/height: 4.826 mm
External dimensions/packaging: TO-263-3
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM45N25-58
|
Visay | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
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|
SUM45N25-58
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
|||
SUM45N25-58-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 250V 45A 3Pin(2+Tab) TO-263
|
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