Technical parameters/dissipated power: 3.75W (Ta), 150W (Tc)
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Input capacitance (Ciss): 1950pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.75W (Ta), 150W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUM45N25-58
|
Visay | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
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SUM45N25-58
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
|||
SUM45N25-58-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 250V 45A 3Pin(2+Tab) TO-263
|
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