Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 550 mW
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 150
Technical parameters/DC current gain (hFE): 220
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Consumer Electronics, Industrial, Signal Processing, Motor Drive & Control, Lighting
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS4320X,135
|
Nexperia | 功能相似 | SOT-89-3 |
PBSS4320X 系列 20 V 3 A 表面贴装 NPN 低 VCEsat (BISS) 晶体管 - SOT-89-3
|
||
PBSS4320X,135
|
NXP | 功能相似 | SOT-89-3 |
PBSS4320X 系列 20 V 3 A 表面贴装 NPN 低 VCEsat (BISS) 晶体管 - SOT-89-3
|
||
|
|
NXP | 功能相似 | SOT-89 |
PBSS4320X - 20 V, 3 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin
|
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