Technical parameters/rated power: | 0.55 W |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 550 mW |
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Technical parameters/breakdown voltage (collector emitter): | 20 V |
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Technical parameters/minimum current amplification factor (hFE): | 200 @2A, 2V |
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Technical parameters/rated power (Max): | 1.6 W |
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Technical parameters/DC current gain (hFE): | 220 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 1600 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-89-3 |
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Dimensions/Length: | 4.6 mm |
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Dimensions/Width: | 2.6 mm |
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Dimensions/Height: | 1.6 mm |
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Dimensions/Packaging: | SOT-89-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Motor drive and control, signal processing, power management, lighting, industrial, consumer electronics products |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS4320X
|
Nexperia | 功能相似 | UPAK |
低饱和电压 NPN 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia
|
||
PBSS4320X
|
NXP | 功能相似 | SOT-89 |
低饱和电压 NPN 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia
|
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