Technical parameters/drain source resistance: 0.021 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 83 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8L-4
External dimensions/length: 6.15 mm
External dimensions/width: 5.13 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: PowerPAKSO-8L-4
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQJ456EP-T1_GE3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET N-CH 100V 32A PPAK SO-8
|
||
SQJ456EP-T1_GE3
|
Vishay Siliconix | 完全替代 | PowerPAKSO-8L-4 |
MOSFET N-CH 100V 32A PPAK SO-8
|
||
SQJ461EP-T1_GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET P-CH 60V 30A
|
||
SQJ461EP-T1_GE3
|
VISHAY | 功能相似 | PowerPak-8 |
MOSFET P-CH 60V 30A
|
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