Technical parameters/drain source resistance: 26 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 32A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 2673pF @25V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 83000 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQJ456EP-T1-GE3
|
Vishay Siliconix | 完全替代 | PowerPAKSO-8L-4 |
Trans MOSFET N-CH 100V 32A Automotive 5Pin(4+Tab) PowerPAK SO EP T/R
|
||
SQJ456EP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAKSO-8L-4 |
Trans MOSFET N-CH 100V 32A Automotive 5Pin(4+Tab) PowerPAK SO EP T/R
|
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