Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 83 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 3342pF @25V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 83W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8L-4
External dimensions/packaging: PowerPAKSO-8L-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQJ456EP-T1-GE3
|
Vishay Siliconix | 完全替代 | PowerPAKSO-8L-4 |
Trans MOSFET N-CH 100V 32A Automotive 5Pin(4+Tab) PowerPAK SO EP T/R
|
||
SQJ456EP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAKSO-8L-4 |
Trans MOSFET N-CH 100V 32A Automotive 5Pin(4+Tab) PowerPAK SO EP T/R
|
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