Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 208W (Tc)
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 20.7A
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/dissipated power (Max): 208W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3-1
External dimensions/packaging: TO-262-3-1
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube, Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPI65R190CFD
|
Infineon | 功能相似 | TO-262-3 |
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||
SPI20N60C3
|
Infineon | 功能相似 | TO-262-3 |
酷MOS ™功率晶体管 Cool MOS Power Transistor
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