Technical parameters/rated voltage (DC): 650 V
Technical parameters/rated current: 20.7 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 220 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 208 W
Technical parameters/input capacitance: 2.40 nF
Technical parameters/gate charge: 114 nC
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/leakage source breakdown voltage: 650 V
Technical parameters/Continuous drain current (Ids): 20.7 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/rated power (Max): 208 W
Technical parameters/descent time: 6.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.2 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.45 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPI65R190CFD
|
Infineon | 类似代替 | TO-262-3 |
？金属氧化物Semiconduvtor场效应晶体管 Metal Oxide Semiconduvtor Field Effect Transistor
|
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