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Model IPI65R190CFD
Description ？金属氧化物Semiconduvtor场效应晶体管 Metal Oxide Semiconduvtor Field Effect Transistor
Product QR code
Brand: Infineon
Packaging TO-262-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
14.45  yuan 14.45yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9068) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Continuous drain current (Ids):

17.5A

 

Technical parameters/rise time:

8.4 ns

 

Technical parameters/Input capacitance (Ciss):

1850pF @100V(Vds)

 

Technical parameters/rated power (Max):

151 W

 

Technical parameters/descent time:

6.4 ns

 

Technical parameters/operating temperature (Min):

-55.0 ℃

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-262-3

 

Dimensions/Length:

10.2 mm

 

Dimensions/Width:

4.5 mm

 

Dimensions/Height:

9.45 mm

 

Dimensions/Packaging:

TO-262-3

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SPI20N60C3 SPI20N60C3 Infineon 类似代替 TO-262-3
酷MOS ™功率晶体管 Cool MOS™ Power Transistor
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