Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 100 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300W (Tc)
Technical parameters/input capacitance: 7.22 nF
Technical parameters/gate charge: 172 nC
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 100 A
Technical parameters/Input capacitance (Ciss): 7220pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB100N04S2-04
|
Infineon | 类似代替 | TO-263-3 |
OptiMOS㈢功率三极管 OptiMOS㈢ Power-Transistor
|
||
IPB100N04S3-03
|
Infineon | 类似代替 | TO-263-3 |
的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
|
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