Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 300 W |
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Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Continuous drain current (Ids): | 100A |
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Technical parameters/rise time: | 46 ns |
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Technical parameters/Input capacitance (Ciss): | 5300pF @25V(Vds) |
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Technical parameters/rated power (Max): | 300 W |
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Technical parameters/descent time: | 33 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10 mm |
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Dimensions/Width: | 9.25 mm |
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Dimensions/Height: | 4.4 mm |
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Dimensions/Packaging: | TO-263-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, elec, Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives. |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB100N04S3-03
|
Infineon | 类似代替 | TO-263-3 |
的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
|
||
SPB100N04S2-04
|
Infineon | 类似代替 | TO-263-3 |
的OptiMOS功率三极管 OptiMOS Power-Transistor
|
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