Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 214 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 100A
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 9600pF @25V(Vds)
Technical parameters/rated power (Max): 214 W
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 214W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10 mm
External dimensions/width: 9.25 mm
External dimensions/height: 4.4 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB100N04S2-04
|
Infineon | 类似代替 | TO-263-3 |
OptiMOS㈢功率三极管 OptiMOS㈢ Power-Transistor
|
||
SPB100N04S2-04
|
Infineon | 类似代替 | TO-263-3 |
的OptiMOS功率三极管 OptiMOS Power-Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review