Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0065 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5.4 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 60A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 2350pF @50V(Vds)
Technical parameters/rated power (Max): 83 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 6.25 mm
External dimensions/width: 5.26 mm
External dimensions/height: 1.12 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH5110TRPBF
|
Infineon | 功能相似 | QFN-8 |
INFINEON IRFH5110TRPBF 晶体管, MOSFET, N沟道, 63 A, 100 V, 0.0103 ohm, 10 V, 4 V 新
|
||
IRFH5110TRPBF
|
International Rectifier | 功能相似 | PQFN-8 |
INFINEON IRFH5110TRPBF 晶体管, MOSFET, N沟道, 63 A, 100 V, 0.0103 ohm, 10 V, 4 V 新
|
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