Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.6 W
Technical parameters/product series: IRFH5110
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 63.0 A
Technical parameters/Input capacitance (Ciss): 3152pF @25V(Vds)
Technical parameters/rated power (Max): 3.6 W
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PQFN-8
External dimensions/packaging: PQFN-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR846ADP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOP |
VISHAY SIR846ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V
|
||
SIR846ADP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
VISHAY SIR846ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V
|
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