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Model SIR846ADP-T1-GE3
Description VISHAY SIR846ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOP
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.94  yuan 5.94yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9268) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0065 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

83 W

 

Technical parameters/threshold voltage:

1.8 V

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Input capacitance (Ciss):

2350pF @50V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

83 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOP

 

Dimensions/Length:

6.25 mm

 

Dimensions/Width:

5.26 mm

 

Dimensions/Height:

1.12 mm

 

Dimensions/Packaging:

SOP

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

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INFINEON IRFH5110TRPBF 晶体管, MOSFET, N沟道, 63 A, 100 V, 0.0103 ohm, 10 V, 4 V 新
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