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Model IRFH5110TRPBF

Description INFINEON IRFH5110TRPBF 晶体管, MOSFET, N沟道, 63 A, 100 V, 0.0103 ohm, 10 V, 4 V 新

Brand: Infineon

Packaging QFN-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	3.6 W
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0103 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	114 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Continuous drain current (Ids):	11A
Technical parameters/rise time:	9.6 ns
Technical parameters/Input capacitance (Ciss):	3152pF @25V(Vds)
Technical parameters/rated power (Max):	3.6 W
Technical parameters/descent time:	6.4 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	3.6W (Ta), 114W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	QFN-8
Dimensions/Packaging:	QFN-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Battery Operated Drive, Isolated Primary Side MOSFETs, Isolated Secondary Side SyncRec MOSFETs
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17

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	SIR846ADP-T1-GE3	VISHAY	功能相似	SO-8	VISHAY SIR846ADP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V	PDF