Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0032 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 31 W
Technical parameters/threshold voltage: 1.1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 25A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 2070pF @15V(Vds)
Technical parameters/rated power (Max): 31 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 4500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 6.25 mm
External dimensions/width: 5.26 mm
External dimensions/height: 1.12 mm
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR164DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR164DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR164DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR418DP-T1-GE3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH 40V 40A PPAK SO-8
|
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