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Model SIR164DP-T1-GE3
Description VISHAY SIR164DP-T1-GE3 Transistor, MOSFET, N-channel, 50 A, 30 V, 2.05 Mohm, 10 V, 1.2 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
4.4  yuan 4.4yuan
5+:
$ 5.9454
25+:
$ 5.5050
50+:
$ 5.1967
100+:
$ 5.0646
500+:
$ 4.9765
2500+:
$ 4.8664
5000+:
$ 4.8224
10000+:
$ 4.7563
Quantity
5+
25+
50+
100+
500+
Price
$5.9454
$5.5050
$5.1967
$5.0646
$4.9765
Price $ 5.9454 $ 5.5050 $ 5.1967 $ 5.0646 $ 4.9765
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1249) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 2.05 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 69 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/rise time: 41 ns

Technical parameters/Input capacitance (Ciss): 3950pF @15V(Vds)

Technical parameters/descent time: 39 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 5200 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/height: 1.04 mm

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

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