Technical parameters/drain source resistance: 0.006 Ω
Technical parameters/dissipated power: 31 W
Technical parameters/threshold voltage: 1.1 V
Technical parameters/input capacitance: 2070pF @15V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/thermal resistance: 4℃/W (RθJC)
Technical parameters/Input capacitance (Ciss): 2070pF @15V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 4.5W (Ta), 31W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5.99 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIR164DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR164DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR164DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR418DP-T1-GE3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH 40V 40A PPAK SO-8
|
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