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Model SIR164DP-T1-GE3
Description MOSFET N-CH 30V 50A PPAK SO-8
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method
Standard packaging quantity 1
5.04  yuan 5.04yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4322) Minimum order quantity(1)
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Technical parameters/dissipated power:

5.2W (Ta), 69W (Tc)

 

Technical parameters/Input capacitance (Ciss):

3950pF @15V(Vds)

 

Technical parameters/dissipated power (Max):

5.2W (Ta), 69W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Length:

6.15 mm

 

Dimensions/Width:

5.15 mm

 

Dimensions/Height:

1.04 mm

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7664DP-T1-GE3 SI7664DP-T1-GE3 Vishay Semiconductor 功能相似
MOSFET N-CH 30V 40A PPAK SO-8
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SIR418DP-T1-GE3 SIR418DP-T1-GE3 VISHAY 功能相似 SO-8
MOSFET N-CH 40V 40A PPAK SO-8
PDF
SIRA12DP-T1-GE3 SIRA12DP-T1-GE3 Vishay Semiconductor 功能相似 SO-8
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 25A; 4.3mohm @ 10V; PowerPAK SO-8
PDF
SIRA12DP-T1-GE3 SIRA12DP-T1-GE3 Vishay Siliconix 功能相似 SO-8
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 25A; 4.3mohm @ 10V; PowerPAK SO-8
PDF
SIRA12DP-T1-GE3 SIRA12DP-T1-GE3 VISHAY 功能相似 PowerPAKSO-8
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 25A; 4.3mohm @ 10V; PowerPAK SO-8
PDF

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