Technical parameters/dissipated power: 3.7W (Ta), 52W (Tc)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 1570pF @10V(Vds)
Technical parameters/dissipated power (Max): 3.7W (Ta), 52W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: 1212-8
External dimensions/packaging: 1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIS410DN-T1-GE3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
MOSFET N-CH 20V 35A PPAK 1212-8
|
||
SIS410DN-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAK-1212-8 |
MOSFET N-CH 20V 35A PPAK 1212-8
|
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