Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.004 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.8 W
Technical parameters/threshold voltage: 1.2 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 35A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1600pF @10V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.8W (Ta), 52W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK-1212-8
External dimensions/packaging: PowerPAK-1212-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7108DN-T1-GE3
|
Vishay Semiconductor | 功能相似 | 1212 |
VISHAY SI7108DN-T1-GE3 晶体管, MOSFET, N沟道, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V
|
||
SI7108DN-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAK-1212-8 |
VISHAY SI7108DN-T1-GE3 晶体管, MOSFET, N沟道, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V
|
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