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Model SI7108DN-T1-GE3
Description VISHAY SI7108DN-T1-GE3 Transistor, MOSFET, N-channel, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V
Product QR code
Brand: Vishay Semiconductor
Packaging 1212
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.5  yuan 5.5yuan
10+:
$ 6.6000
100+:
$ 6.2700
500+:
$ 6.0500
1000+:
$ 6.0390
2000+:
$ 5.9950
5000+:
$ 5.9400
7500+:
$ 5.8960
10000+:
$ 5.8740
Quantity
10+
100+
500+
1000+
2000+
Price
$6.6000
$6.2700
$6.0500
$6.0390
$5.9950
Price $ 6.6000 $ 6.2700 $ 6.0500 $ 6.0390 $ 5.9950
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9944) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0041 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.5 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 22.0 A

Technical parameters/rise time: 10 ns

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1500 mW

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: 1212

External dimensions/height: 1.04 mm

External dimensions/packaging: 1212

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7108DN-T1-E3 SI7108DN-T1-E3 VISHAY 功能相似 PowerPAK-1212-8
MOSFET N-CH 20V 14A 1212-8
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SI7108DN-T1-E3 SI7108DN-T1-E3 Vishay Semiconductor 功能相似 1212
MOSFET N-CH 20V 14A 1212-8
PDF
SIS410DN-T1-GE3 SIS410DN-T1-GE3 VISHAY 功能相似 PowerPAK-1212-8
VISHAY SIS410DN-T1-GE3 晶体管, MOSFET, N沟道, 35 A, 20 V, 4 mohm, 10 V, 1.2 V
PDF
SIS410DN-T1-GE3 SIS410DN-T1-GE3 Vishay Semiconductor 功能相似 PowerPAK-1212-8
VISHAY SIS410DN-T1-GE3 晶体管, MOSFET, N沟道, 35 A, 20 V, 4 mohm, 10 V, 1.2 V
PDF

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