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Model SIS410DN-T1-GE3
Description VISHAY SIS410DN-T1-GE3 Transistor, MOSFET, N-channel, 35 A, 20 V, 4 Mohm, 10 V, 1.2 V
Product QR code
Brand: Vishay Semiconductor
Packaging PowerPAK-1212-8
Delivery time
Packaging method
Standard packaging quantity 1
4.65  yuan 4.65yuan
5+:
$ 6.2789
25+:
$ 5.8138
50+:
$ 5.4882
100+:
$ 5.3487
500+:
$ 5.2556
2500+:
$ 5.1394
5000+:
$ 5.0928
10000+:
$ 5.0231
Quantity
5+
25+
50+
100+
500+
Price
$6.2789
$5.8138
$5.4882
$5.3487
$5.2556
Price $ 6.2789 $ 5.8138 $ 5.4882 $ 5.3487 $ 5.2556
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3948) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.004 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5.2 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: PowerPAK-1212-8

External dimensions/length: 3.3 mm

External dimensions/width: 3.3 mm

External dimensions/height: 1.04 mm

External dimensions/packaging: PowerPAK-1212-8

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7108DN-T1-GE3 SI7108DN-T1-GE3 Vishay Semiconductor 功能相似 1212
VISHAY SI7108DN-T1-GE3 晶体管, MOSFET, N沟道, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V
PDF
SI7108DN-T1-GE3 SI7108DN-T1-GE3 Vishay Siliconix 功能相似 PowerPAK-1212-8
VISHAY SI7108DN-T1-GE3 晶体管, MOSFET, N沟道, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V
PDF

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