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Model SIR640DP-T1-GE3
Description VISHAY SIR640DP-T1-GE3 Transistor, MOSFET, N-channel, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
7.23  yuan 7.23yuan
10+:
$ 8.6772
100+:
$ 8.2433
500+:
$ 7.9541
1000+:
$ 7.9396
2000+:
$ 7.8818
5000+:
$ 7.8095
7500+:
$ 7.7516
10000+:
$ 7.7227
Quantity
10+
100+
500+
1000+
2000+
Price
$8.6772
$8.2433
$7.9541
$7.9396
$7.8818
Price $ 8.6772 $ 8.2433 $ 7.9541 $ 7.9396 $ 7.8818
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9046) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0014 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 104 W

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Other/Packaging Methods: Cut Tape (CT)

Other/Manufacturing Applications: Power Management, Industrial

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 Vishay Siliconix 功能相似 SO-8
VISHAY SIR640ADP-T1-GE3 MOSFET Transistor, N Channel, 100A, 40V, 0.00165Ω, 10V, 2V New
PDF
SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 Vishay Semiconductor 功能相似 SO-8
VISHAY SIR640ADP-T1-GE3 MOSFET Transistor, N Channel, 100A, 40V, 0.00165Ω, 10V, 2V New
PDF

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