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Model SIR640ADP-T1-GE3
Description MOSFET N-CH 40V 60A PPAK SO-8
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
6.39  yuan 6.39yuan
10+:
$ 7.6632
100+:
$ 7.2800
500+:
$ 7.0246
1000+:
$ 7.0118
2000+:
$ 6.9607
5000+:
$ 6.8969
7500+:
$ 6.8458
10000+:
$ 6.8202
Quantity
10+
100+
500+
1000+
2000+
Price
$7.6632
$7.2800
$7.0246
$7.0118
$6.9607
Price $ 7.6632 $ 7.2800 $ 7.0246 $ 7.0118 $ 6.9607
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4015) Minimum order quantity(10)
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Technical parameters/number of channels: 1

Technical parameters/dissipated power: 104 W

Technical parameters/threshold voltage: 900 mV

Technical parameters/rise time: 6 ns

Technical parameters/Input capacitance (Ciss): 4240pF @20V(Vds)

Technical parameters/descent time: 8 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 6.25W (Ta), 104W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/width: 5.15 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Semiconductor 功能相似 SOIC
VISHAY SIR640DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
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