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Model SIR640ADP-T1-GE3
Description VISHAY SIR640ADP-T1-GE3 MOSFET Transistor, N Channel, 100A, 40V, 0.00165Ω, 10V, 2V New
Product QR code
Brand: Vishay Semiconductor
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.7  yuan 5.7yuan
10+:
$ 6.8436
100+:
$ 6.5014
500+:
$ 6.2733
1000+:
$ 6.2619
2000+:
$ 6.2163
5000+:
$ 6.1592
7500+:
$ 6.1136
10000+:
$ 6.0908
Quantity
10+
100+
500+
1000+
2000+
Price
$6.8436
$6.5014
$6.2733
$6.2619
$6.2163
Price $ 6.8436 $ 6.5014 $ 6.2733 $ 6.2619 $ 6.2163
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2753) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.00165 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 104 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/Input capacitance (Ciss): 4240pF @20V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 6250 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/height: 1.07 mm

External dimensions/packaging: SO-8

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Semiconductor 功能相似 SOIC
VISHAY SIR640DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
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