Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 33 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 527pF @100V(Vds)
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 33 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.63 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.8 mm
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Industrial, Consumer Electronics, Power Management, Portable Devices
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDF08N50ZG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR NDF08N50ZG 场效应管, MOSFET, N沟道, 7.5A, 500V
|
||
SIHP8N50D-GE3
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
VISHAY SIHP8N50D-GE3 晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
|
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