Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 690 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 31 W |
|
Technical parameters/threshold voltage: | 4.5 V |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Continuous drain current (Ids): | 4.70 A |
|
Technical parameters/rise time: | 23 ns |
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Technical parameters/Input capacitance (Ciss): | 1095pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 35 W |
|
Technical parameters/descent time: | 29 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 35W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.63 mm |
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Dimensions/Width: | 4.9 mm |
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Dimensions/Height: | 16.12 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF8N50D-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY SIHF8N50D-E3 晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
|
||
SIHF8N50D-E3
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
VISHAY SIHF8N50D-E3 晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
|
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