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Model SIHP8N50D-GE3
Description VISHAY SIHP8N50D-GE3 Transistor, MOSFET, N-channel, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
Product QR code
Brand: Vishay Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
3.51  yuan 3.51yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6950) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.7 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

156 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/rise time:

16 ns

 

Technical parameters/Input capacitance (Ciss):

527pF @100V(Vds)

 

Technical parameters/descent time:

11 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

156 W

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.51 mm

 

Dimensions/Width:

4.65 mm

 

Dimensions/Height:

9.01 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Bulk

 

Other/Manufacturing Applications:

Power Management, Consumer Electronics, Industrial, Consumer Electronics, Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIHF8N50D-E3 SIHF8N50D-E3 Vishay Siliconix 类似代替 TO-220-3
VISHAY SIHF8N50D-E3 晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
PDF
SIHF8N50D-E3 SIHF8N50D-E3 Vishay Semiconductor 类似代替 TO-220-3
VISHAY SIHF8N50D-E3 晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
PDF

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