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Model SI9933BDY-T1-E3
Description MOSFET, Power; Dual P-Channel; -20V; 12V; 3.4A; 2W; -55 to 150℃
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Brand: Vishay Siliconix
Packaging SOIC-8
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Standard packaging quantity 1
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2730) Minimum order quantity(1)
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Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/rated power (Max): 1.1 W

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI9933CDY-T1-GE3 SI9933CDY-T1-GE3 VISHAY 类似代替 SOIC-8
MOSFET, Dual P-CH, Vds 20V, Vgs +/- 20V, Rds(on) 48mohm, Id 4A, SO8, Pd 3.1W
SI9933CDY-T1-GE3 SI9933CDY-T1-GE3 Vishay Siliconix 类似代替 SOIC-8
MOSFET, Dual P-CH, Vds 20V, Vgs +/- 20V, Rds(on) 48mohm, Id 4A, SO8, Pd 3.1W
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