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Model SI7949DP-T1-GE3
Description SI7949DP-T1-GE3 tape
Product QR code
Brand: VISHAY
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
15.09  yuan 15.09yuan
5+:
$ 17.6600
50+:
$ 16.9053
200+:
$ 16.4826
500+:
$ 16.3770
1000+:
$ 16.2713
2500+:
$ 16.1506
5000+:
$ 16.0751
7500+:
$ 15.9996
Quantity
5+
50+
200+
500+
1000+
Price
$17.6600
$16.9053
$16.4826
$16.3770
$16.2713
Price $ 17.6600 $ 16.9053 $ 16.4826 $ 16.3770 $ 16.2713
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7641) Minimum order quantity(5)
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Technical parameters/drain source resistance: 64 mΩ

Technical parameters/polarity: Dual P

Technical parameters/dissipated power: 1.5 W

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 3.2A

Technical parameters/rise time: 9 ns

Technical parameters/descent time: 30 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1500 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 2500

Compliant with standards/RoHS standards: RoHS Compliant

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7949DP-T1-GE3 SI7949DP-T1-GE3 Vishay Semiconductor 类似代替 SOIC
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A
PDF
SI7949DP-T1-GE3 SI7949DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A
PDF
SI7949DP-T1-GE3 SI7949DP-T1-GE3 VISHAY 类似代替 SOIC-8
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A

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