Technical parameters/polarity: Dual P-Channel
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): -5.00 A
Technical parameters/rated power (Max): 1.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7949DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A
|
||
SI7949DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A
|
||
SI7949DP-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A
|
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