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Model SI7949DP-T1-GE3
Description VISHAY SI7949DP-T1-GE3 Field effect transistor, MOSFET, dual P-channel, -60V, 5A
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
4.84  yuan 4.84yuan
5+:
$ 6.5273
25+:
$ 6.0438
50+:
$ 5.7053
100+:
$ 5.5603
500+:
$ 5.4636
2500+:
$ 5.3427
5000+:
$ 5.2943
10000+:
$ 5.2218
Quantity
5+
25+
50+
100+
500+
Price
$6.5273
$6.0438
$5.7053
$5.5603
$5.4636
Price $ 6.5273 $ 6.0438 $ 5.7053 $ 5.5603 $ 5.4636
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8603) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 80 mΩ

Technical parameters/polarity: Dual P-Channel

Technical parameters/dissipated power: 1.5 W

Technical parameters/drain source voltage (Vds): -60.0 V

Technical parameters/Continuous drain current (Ids): -5.00 A

Technical parameters/rise time: 9 ns

Technical parameters/descent time: 30 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1500 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/height: 1.04 mm

External dimensions/packaging: SOIC

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7949DP-T1-GE3 SI7949DP-T1-GE3 Vishay Semiconductor 类似代替 SOIC
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A
PDF
SI7949DP-T1-GE3 SI7949DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A
PDF
SI7949DP-T1-GE3 SI7949DP-T1-GE3 VISHAY 类似代替 SOIC-8
VISHAY SI7949DP-T1-GE3 场效应管, MOSFET, 双P沟道, -60V, 5A

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