Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/dissipated power: 1.8 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.8W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/length: 5.99 mm
External dimensions/height: 1.07 mm
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7682DP-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 20A PPAK SO-8
|
||
SI7686DP-T1-E3
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
MOSFET N-CH 30V 35A PPAK SO-8
|
||
SI7686DP-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 35A PPAK SO-8
|
||
SI7686DP-T1-E3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 30V 35A PPAK SO-8
|
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