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Model SI7686DP-T1-E3
Description NChannel 30-V (D-S) MOSFET N-Channel 30-V (D-S) MOSFET
Product QR code
Brand: VISHAY
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.26  yuan 3.26yuan
5+:
$ 4.4051
25+:
$ 4.0788
50+:
$ 3.8503
100+:
$ 3.7525
500+:
$ 3.6872
2500+:
$ 3.6056
5000+:
$ 3.5730
10000+:
$ 3.5240
Quantity
5+
25+
50+
100+
500+
Price
$4.4051
$4.0788
$3.8503
$3.7525
$3.6872
Price $ 4.4051 $ 4.0788 $ 3.8503 $ 3.7525 $ 3.6872
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6036) Minimum order quantity(5)
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Technical parameters/drain source resistance: 9.5 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 35.0 A

Technical parameters/Input capacitance (Ciss): 1220pF @15V(Vds)

Technical parameters/rated power (Max): 37.9 W

Technical parameters/descent time: 8 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 5000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Minimum Packaging: 2500

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7682DP-T1-E3 SI7682DP-T1-E3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 30V 20A PPAK SO-8
PDF
SI7682DP-T1-GE3 SI7682DP-T1-GE3 VISHAY 类似代替
MOSFET N-CH 30V 20A PPAK SO-8
PDF
SI7682DP-T1-GE3 SI7682DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 30V 20A PPAK SO-8
PDF

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