Other/FET types: N-Channel
Other/Vgs (maximum value): ±20V
Other/Rds On (Max) @ Id, Vgs: 9 mOhms @ 20A,10V
Other/continuous drain current Id: 20A(Tc)
Other/drain source voltage Vds: 30V
Other/working temperature: -55℃~150℃
Other/Packaging/Shell: PowerPAK® SO-8
Other/Vgs (th): 2.5V @ 250uA
Other/Pd - power dissipation (Max): 5W(Ta),27.5W(Tc)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7682DP-T1-E3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET N-CH 30V 20A PPAK SO-8
|
||
SI7686DP-T1-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 35A PPAK SO-8
|
||
SI7686DP-T1-E3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 30V 35A PPAK SO-8
|
||
SI7686DP-T1-E3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH 30V 35A PPAK SO-8
|
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